TY  - GEN
DO  - 10.6083/M4BR8Q41
DO  - DOI
AD  - Oregon Graduate Institute of Science and Technology
T1  - Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge a microstructure study
DA  - 2000
AU  - Radulescu, Fabian
L1  - https://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
PB  - Oregon Graduate Institute of Science and Technology
PY  - 2000
ID  - 121
L4  - https://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
KW  - Semiconductors
KW  - Metallurgy
KW  - electric properties
KW  - junctions
KW  - semiconductor-metal boundaries
KW  - ohmic contacts
TI  - Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge a microstructure study
Y1  - 2000
L2  - https://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
LK  - https://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
UR  - https://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
ER  -