000000121 001__ 121
000000121 005__ 20231130114538.0
000000121 0247_ $$2DOI$$a10.6083/M4BR8Q41
000000121 037__ $$aETD
000000121 245__ $$aPd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge a microstructure study
000000121 260__ $$bOregon Graduate Institute of Science and Technology
000000121 269__ $$a2000
000000121 336__ $$aDissertation
000000121 502__ $$bPh.D.
000000121 540__ $$fCC BY
000000121 542__ $$fIn copyright - single owner
000000121 650__ $$aSemiconductors$$025858
000000121 650__ $$aMetallurgy$$022110
000000121 6531_ $$aelectric properties
000000121 6531_ $$ajunctions
000000121 6531_ $$asemiconductor-metal boundaries
000000121 6531_ $$aohmic contacts
000000121 692__ $$aDepartment of Materials Science and Engineering$$041420
000000121 7001_ $$aRadulescu, Fabian
000000121 7001_ $$uOregon Graduate Institute of Science and Technology$$041352
000000121 8564_ $$9b57f8ce5-0ed9-4a3f-b7b9-25d7ffeabe0b$$s7310248$$uhttps://digitalcollections.ohsu.edu/record/121/files/121_etd.pdf
000000121 905__ $$a/rest/prod/cn/69/m4/13/cn69m413j
000000121 909CO $$ooai:digitalcollections.ohsu.edu:121$$pstudent-work
000000121 980__ $$aTheses and Dissertations