TY  - THES
DO  - 10.6083/M4D50JX0
DO  - DOI
AD  - Oregon Graduate Center
T1  - Characteristics of N-channel accumulation mode thin film polysilicon MOSFETs
DA  - 1987
AU  - Tamjidi, Mohammad R.
L1  - https://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
PB  - Oregon Graduate Center
PY  - 1987
ID  - 229
L4  - https://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
KW  - metal oxide semiconductor field-effect transistors
TI  - Characteristics of N-channel accumulation mode thin film polysilicon MOSFETs
Y1  - 1987
L2  - https://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
LK  - https://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
UR  - https://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
ER  -