000000229 001__ 229
000000229 005__ 20231130114543.0
000000229 0247_ $$2DOI$$a10.6083/M4D50JX0
000000229 037__ $$aETD
000000229 245__ $$aCharacteristics of N-channel accumulation mode thin film polysilicon MOSFETs
000000229 260__ $$bOregon Graduate Center
000000229 269__ $$a1987
000000229 336__ $$aThesis
000000229 502__ $$bM.S.
000000229 540__ $$fCC BY
000000229 542__ $$fIn copyright - single owner
000000229 6531_ $$ametal oxide semiconductor field-effect transistors
000000229 692__ $$aDepartment of Electrical and Computer Engineering$$041409
000000229 7001_ $$aTamjidi, Mohammad R.
000000229 7001_ $$uOregon Graduate Center$$041351
000000229 8564_ $$912d6ec9d-2246-45ba-9449-785b7a4af3ed$$s3405065$$uhttps://digitalcollections.ohsu.edu/record/229/files/229_etd.pdf
000000229 905__ $$a/rest/prod/61/08/vb/24/6108vb24b
000000229 909CO $$ooai:digitalcollections.ohsu.edu:229$$pstudent-work
000000229 980__ $$aTheses and Dissertations