TY  - GEN
DO  - 10.6083/M4GX48H1
DO  - DOI
AD  - Oregon Graduate Center
T1  - A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy
DA  - 1987
AU  - Bacher, Fred R.
L1  - https://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
PB  - Oregon Graduate Center
PY  - 1987
ID  - 236
L4  - https://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
KW  - crystal growth
KW  - indium phosphide
KW  - epitaxy
KW  - indium alloys
KW  - gallium arsenide
TI  - A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy
Y1  - 1987
L2  - https://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
LK  - https://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
UR  - https://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
ER  -