000000236 001__ 236
000000236 005__ 20231130114543.0
000000236 0247_ $$2DOI$$a10.6083/M4GX48H1
000000236 037__ $$aETD
000000236 245__ $$aA study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy
000000236 260__ $$bOregon Graduate Center
000000236 269__ $$a1987
000000236 336__ $$aDissertation
000000236 502__ $$bPh.D.
000000236 540__ $$fCC BY
000000236 542__ $$fIn copyright - single owner
000000236 6531_ $$acrystal growth
000000236 6531_ $$aindium phosphide
000000236 6531_ $$aepitaxy
000000236 6531_ $$aindium alloys
000000236 6531_ $$agallium arsenide
000000236 692__ $$aDepartment of Electrical Engineering and Applied Physics$$041410
000000236 7001_ $$aBacher, Fred R.
000000236 7001_ $$uOregon Graduate Center$$041351
000000236 8564_ $$9ebc80aef-163a-48a2-a7b3-9db9d79e1b18$$s3394444$$uhttps://digitalcollections.ohsu.edu/record/236/files/236_etd.pdf
000000236 905__ $$a/rest/prod/9g/54/xh/65/9g54xh65x
000000236 909CO $$ooai:digitalcollections.ohsu.edu:236$$pstudent-work
000000236 980__ $$aTheses and Dissertations