000000277 001__ 277
000000277 005__ 20231130114545.0
000000277 0247_ $$2DOI$$a10.6083/M46971HK
000000277 037__ $$aETD
000000277 245__ $$aElectrical characterization of epitaxial layers of gallium arsenide
000000277 260__ $$bOregon Graduate Center
000000277 269__ $$a1988
000000277 336__ $$aThesis
000000277 502__ $$bM.S.
000000277 540__ $$fCC BY
000000277 542__ $$fIn copyright - single owner
000000277 6531_ $$agallium arsenide semiconductors
000000277 6531_ $$aepitaxy
000000277 692__ $$aDepartment of Electrical and Computer Engineering$$041409
000000277 7001_ $$aKhatwani, Rani
000000277 7001_ $$uOregon Graduate Center$$041351
000000277 8564_ $$976b4cac5-c534-4824-ac1d-278c46531768$$s1143299$$uhttps://digitalcollections.ohsu.edu/record/277/files/277_etd.pdf
000000277 905__ $$a/rest/prod/9c/67/wm/86/9c67wm86f
000000277 909CO $$ooai:digitalcollections.ohsu.edu:277$$pstudent-work
000000277 980__ $$aTheses and Dissertations