A far-ultraviolet (UV) spectroscopic ellipsometer operating up to 9 eV was developed to characterize high‑k dielectric materials as potential alternatives to SiO₂ in scaled silicon devices. Optical properties of bulk, epitaxial, and amorphous films were measured, yielding dielectric functions and band gap energies. These data help assess material suitability based on band gaps and band offsets, and support optical metrology for gate dielectrics on silicon. Additionally, a method was established to determine optical constant tensors in anisotropic materials such as DyScO₃ and GdScO₃.
