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Abstract
        As  flat  panel  displays  shrink  in  size,  thin  film  transistor  (TFT) technology  is driven  to  improve  display  resolution  (i.e.  reduce  pixel  transistor  size)  and  to  integrate more functionality (i.e. circuitries) onto the display substrate. Thus, a key TFT process is the fabrication of  higher quality silicon active layer on  the  amorphous display substrate. Excimer-laser-annealing  (ELA)  is  one method  by  which  energy  is  delivered  to  melt amorphous  silicon films to produce  directionally solidified, high  quality silicon crystals without causing extensive heating of  the substrate.