login
Menu
Search
Browse…
Collections
All works
Library databases
Subject guides
Archival finding aids
Web archives
Get info…
Digital Collections Guide
Library Home
Historical Collections Home
Get help…
Ask a question
Chat with us
Meet with a library expert
Attend a workshop
login
Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge a microstructure study
Radulescu, Fabian
;
2000
Download
Formats
Format
BibTeX
View
Download
MARCXML
View
Download
TextMARC
View
Download
MARC
View
Download
DublinCore
View
Download
EndNote
View
Download
NLM
View
Download
RefWorks
View
Download
RIS
View
Download
Add to Basket
Files
Details
Title
Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge a microstructure study
Creator
Radulescu, Fabian
Oregon Graduate Institute of Science and Technology
Publisher
Oregon Graduate Institute of Science and Technology
Date
2000
Subjects
Semiconductors
Metallurgy
Keywords
electric properties
;
junctions
;
semiconductor-metal boundaries
;
ohmic contacts
DOI
https://doi.org/10.6083/M4BR8Q41
Content Type
Dissertation
Degree Type
Ph.D.
Department
Department of Materials Science and Engineering
Copyright Status
In copyright - single owner
Usage Statement
CC BY
Record ID
121
Record Created
2023-06-29
Record Appears in
Organizations
>
Departments and Divisions
>
Legacy Departments (UOMS/OGC/OGI)
>
Department of Materials Science and Engineering
OHSU Works
>
Student Work
>
Degrees
>
Doctor of Philosophy (Ph.D.)
OHSU Works
>
Student Work
>
Dissertations
Theses and Dissertations
Featured Collections
All Records
PDF
Statistics
Downloads
Unique Downloads
Views
Unique Views
from
to
By Days
By Months
By Years
Update
Export
Download Full History