The aggressive scaling of CMOS devices is driving Si02-based gate dielectrics to their physical limits as stated in the International Technology Roadmap for Semiconductors (ITRS). The replacement of Si02 with a high-K material allows for an increase in the physical thickness of the gate insulator while maintaining a low equivalent oxide thickness and low direct tunneling current. Hf-based dielectric stands out in comparison to the other high-K dielectrics and becomes the leading candidate to replace Si02. The identification of alternate gate dielectrics requires complete characterization. Especially, the electrical characterization of high-K gate dielectric is crucial. In this investigation, the MOS capacitors with various high-K materials deposited by atomic layer chemical vapor deposition (ALCVD) are employed as test structures to study the electrical properties of high-K materials in the low-frequency region.