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1.
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New MOS (metal-oxide-semiconductor) field-effect gas sensors capable of detecting carbon monoxide at low concentrations and operating temperatures are fabricated and test [...]
2003-10-01 |
Thesis |
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2.
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3.
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4.
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5.
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The aggressive scaling of CMOS devices is driving Si02-based gate dielectrics to their physical limits as stated in the International Technology Roadmap for Semiconducto [...]
2004-12-01 |
Dissertation |
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6.
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7.
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8.
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9.
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In complex VLSI with circuits approaching 1 billion transistors, the major limiting factor to performance is interconnect. With continued scaling of semiconductors, this [...]
2004-04-01 |
Thesis |
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10.
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